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| SLD1131VS Index-Guided Red Laser Diode Description The SLD1131VS is an index-guided red laser diode. It features small astigmatism and high-speed pulse response. Features * Red visible light (670nm typ.) * Small astigmatism (7m typ.) * High-speed pulse response (Rise time = 5ns typ.) * Low operating current (40mA typ.) * Small package (5.6mm) * Longitudinal single mode Applications * Bar code readers * Measuring instruments Structure * AlGaInP quantum well-structured laser diode * PIN photo diode for optical power output monitor Recommend Optical Power Output 4 mW M-294 Absolute Maximum Ratings (Tc = 25C) * Optical power output PO * Reverse voltage VR LD PD * Operating temperature Topr * Storage temperature Tstg Connection Diagram 3 PD 2 1 COMMON 6 2 15 -10 to +50 -40 to +85 mW V V C C Pin Configuration LD 2 1 3 1. LD cathode 2. PD anode 3. COMMON Bottom View Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits. -1- E94306B73-PS SLD1131VS Optical and Electrical Characteristics (Tc = 25C) Item Threshold current Operating current Operating voltage Wavelength Radiation angle Positional accuracy Perpendicurar Parallel Position Angle Ith Iop Vop // X, Y, Z // D As Im Po = 4mW Po = 4mW Po = 4mW, Vr = 5V 0.08 0.15 0.3 7 0.20 Po = 4mW Po = 4mW Po = 4mW Po = 4mW Po = 4mW 660 24 7 Symbol Conditions Min. Typ. 30 40 2.3 670 30 8.5 Tc : Case temperature Max. 50 60 2.8 680 35 12 80 3 3 0.7 15 0.60 Unit mA mA V nm degree degree m degree degree mW/mA m mA Differential efficiency Astigmatism Monitor current Marking H Product name LOT No. -2- SLD1131VS Example of Representative Characteristics Optical power output vs. Forward current characteristics Optical power output vs. Monitor current characteristics TC = 50C 25C 0C TC = 0C 25C 50C 6 1 Po = 4mW, Tc = 25C 0.9 Far field pattern (FFP) Po - Optical power output [mW] 5 0.8 Relative radiant intensity // 4 0.7 0.6 0.5 0.4 0.3 0.2 0.1 3 2 1 0 0 10 20 30 40 50 60 0 -40 -30 -20 -10 0 10 20 30 40 IF - Forward current [mA] 0 0.25 Imon - Monitor current [mA] 0.5 Angle [degree] Threshold current vs. Temperature characteristics 200 Monitor current vs. Temperature characteristics 0.4 PO = 4mW Ith - Threshold current [mA] Im - Monitor current [mA] 100 0.3 0.2 0.1 10 -20 -10 0 10 20 30 40 50 60 0 -20 0 20 40 60 Tc - Case temperature [C] Tc - Case temperature [C] -3- SLD1131VS Temperature dependence of spectrum PO = 4mW TC = 50C Relative radiant intensity TC = 25C TC = 0C 665 670 675 680 685 690 - Wavelength [nm] -4- SLD1131VS Power output dependence of spectrum TC = 25C PO = 6mW Relative radiant intensity PO = 4mW PO = 1mW 670 675 680 685 - Wavelength [nm] -5- SLD1131VS Package Outline Unit: mm M-294 Reference Slot 0.5 3 1.0 90 2 1 0 5.6 - 0.025 Window Glass 4.4 MAX 3.7 MAX 1.0 MIN 0.5 MIN 0.4 1.26 231 3 - 0.45 PCD 2.0 Optical Distance = 1.35 0.08 SONY CODE EIAJ CODE JEDEC CODE M-294 6.5 LD Chip & Photo Diode 1.2 0.1 Reference Plane 2.6 MAX 0.25 PACKAGE WEIGHT 0.3g -6- |
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